STGB30V60DF
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $2.52
Unit Price: USD $2.520588
≥1 USD $2.520588
≥10 USD $2.377908
≥100 USD $2.243311
≥500 USD $2.116334
≥1000 USD $1.996538
Inventory: 63
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
Switching Energy 383μJ (on), 233μJ (off)
Td (on/off) @ 25°C 45ns/189ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 163nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 225 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Turn On Time 59 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.85V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 53 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 258W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STGB30
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 258W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 2.240009g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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