STGB20NC60VT4
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $2.87
Unit Price: USD $2.86995
≥1 USD $2.86995
≥10 USD $2.35505
≥100 USD $2.2819
≥500 USD $2.2078
≥1000 USD $2.13465
Inventory: 1581
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number STGB20
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 42.5 ns
Test Condition 390V, 20A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 280 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 31ns/100ns
Switching Energy 220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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