Gate-Emitter Thr Voltage-Max 2V
Switching Energy 11.8mJ (off)
Td (on/off) @ 25°C 2.3μs/2μs
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 15000 ns
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Test Condition 250V, 20A, 1k Ω, 4.5V
Max Breakdown Voltage 425V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 425V
Continuous Drain Current (ID) 20A
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 375V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 2.3 μs
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ