STGB20NB37LZ
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 425V 40A 200W D2PAK
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Buying Options
Total Price: USD $2.98
Unit Price: USD $2.976427
≥1 USD $2.976427
≥10 USD $2.807945
≥100 USD $2.649004
≥500 USD $2.499058
≥1000 USD $2.357603
Inventory: 1177
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 2V
Switching Energy 11.8mJ (off)
Td (on/off) @ 25°C 2.3μs/2μs
Current - Collector Pulsed (Icm) 80A
Gate Charge 51nC
Turn Off Time-Nom (toff) 15000 ns
Vce(on) (Max) @ Vge, Ic 2V @ 4.5V, 20A
Test Condition 250V, 20A, 1k Ω, 4.5V
Turn On Time 2900 ns
Collector Emitter Breakdown Voltage 425V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 375V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGB20
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature ESD PROTECTED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series PowerMESH?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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