Gate-Emitter Voltage-Max 16V
Td (on/off) @ 25°C 650ns/13.5μs
Current - Collector Pulsed (Icm) 40A
Turn Off Time-Nom (toff) 22200 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Test Condition 300V, 10A, 5V
Collector Emitter Breakdown Voltage 420V
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 360V
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ