Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 82μJ (on), 155μJ (off)
Td (on/off) @ 25°C 22.5ns/116ns
Turn Off Time-Nom (toff) 340 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Test Condition 390V, 7A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 25A
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 116 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Transistor Application POWER CONTROL
Turn On Delay Time 22.5 ns
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 80W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ