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STGB12NB60KDT4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 258μJ (off)
Td (on/off) @ 25°C 25ns/96ns
Current - Collector Pulsed (Icm) 60A
Gate Charge 54nC
Turn Off Time-Nom (toff) 461 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 12A
Test Condition 480V, 12A, 10 Ω, 15V
Turn On Time 39.5 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 80 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Rise Time 14.5ns
Transistor Application MOTOR CONTROL
Input Type Standard
Power Dissipation 125W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGB12
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 18A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Max Power Dissipation 125W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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