Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 55μJ (on), 85μJ (off)
Td (on/off) @ 25°C 17ns/72ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 242 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 10A
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 72 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Transistor Application POWER CONTROL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 65W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ