Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 31.8μJ (on), 95μJ (off)
Td (on/off) @ 25°C 14.2ns/72ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 247 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 22ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 65W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ