Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 5mJ (off)
Td (on/off) @ 25°C 700ns/1.2μs
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 3100 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Test Condition 480V, 10A, 1k Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 10A
Max Collector Current 29A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Transistor Application POWER CONTROL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 80W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ