Gate-Emitter Thr Voltage-Max 2.4V
Switching Energy 2.4mJ (on), 5mJ (off)
Td (on/off) @ 25°C 1.3μs/8μs
Current - Collector Pulsed (Icm) 40A
Turn Off Time-Nom (toff) 17800 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Test Condition 328V, 10A, 1k Ω, 5V
Collector Emitter Saturation Voltage 1.2V
Collector Emitter Breakdown Voltage 440V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~175°C TJ