RGTV60TS65DGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
650V 30A FIELD STOP TRENCH IGBT
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Technical Details
Technical
Turn Off Time-Nom (toff) 201 ns
IGBT Type Trench Field Stop
Gate Charge 64nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 33ns/105ns
Switching Energy 570μJ (on), 500μJ (off)
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Turn On Time 45 ns
Current - Collector (Ic) (Max) 60A
Voltage - Collector Emitter Breakdown (Max) 650V
Reverse Recovery Time 95ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 194W
Input Type Standard
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Operating Temperature -40°C~175°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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