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RGTV00TS65GC11

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description 650V 50A FIELD STOP TRENCH IGBT
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Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Input Type Standard
Power - Max 276W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 95A
Turn On Time 62 ns
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 247 ns
IGBT Type Trench Field Stop
Gate Charge 104nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 41ns/142ns
Switching Energy 1.17mJ (on), 940μJ (off)

Compliance

RoHS Status ROHS3 Compliant

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