RGTH60TS65GC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 58A 197W TO-247N
PDF
/
Buying Options
Total Price: USD $3.12
Unit Price: USD $3.124
≥1 USD $3.124
≥10 USD $2.47309
≥100 USD $2.11977
≥500 USD $1.884256
≥1000 USD $1.613392
≥3000 USD $1.519179
Inventory: 55
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 194W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 197W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 58A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 67 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 179 ns
IGBT Type Trench Field Stop
Gate Charge 58nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 27ns/105ns
Compliance
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
RGTH60TS65GC11+price,RGTH60TS65GC11+datasheet,RGTH60TS65GC11+in stock,buy+RGTH60TS65GC11,finder+RGTH60TS65GC11,RGTH60TS65GC11+tutorials,RGTH60TS65GC11+download