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RGTH60TS65DGC11

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 650V 58A 194W TO-247N
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Buying Options
Total Price: USD $3.18
Unit Price: USD $3.1768
≥1 USD $3.1768
≥10 USD $2.51973
≥100 USD $2.15981
≥500 USD $1.919817
≥1000 USD $1.643831
≥3000 USD $1.54785
Inventory: 512
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 194W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 194W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 58A
Reverse Recovery Time 58 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 67 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 179 ns
IGBT Type Trench Field Stop
Gate Charge 58nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 27ns/105ns

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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