RGTH00TS65DGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 85A 277W TO-247N
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Buying Options
Total Price: USD $11.06
Unit Price: USD $11.0599
≥1 USD $11.0599
≥10 USD $9.07535
≥100 USD $8.7913
≥500 USD $8.5082
≥1000 USD $8.22415
Inventory: 1078
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Technical
Td (on/off) @ 25°C 39ns/143ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 94nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 221 ns
Continuous Collector Current 50A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Test Condition 400V, 50A, 10 Ω, 15V
Turn On Time 102 ns
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 54 ns
Max Collector Current 85A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 277W
Input Type Standard
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 277W
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2014
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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