RGT8NS65DGTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 8A 65W TO-263S
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Buying Options
Total Price: USD $1.27
Unit Price: USD $1.269574
≥1 USD $1.269574
≥200 USD $0.506779
≥500 USD $0.489712
≥1000 USD $0.481834
Inventory: 1135
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Technical
Td (on/off) @ 25°C 17ns/69ns
Current - Collector Pulsed (Icm) 12A
Gate Charge 13.5nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 158 ns
Continuous Collector Current 4A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Test Condition 400V, 4A, 50 Ω, 15V
Turn On Time 54 ns
Max Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 40 ns
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 65W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 65W
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 1.946308g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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