RGT60TS65DGC11
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 55A 194W TO-247N
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Total Price: USD $1.92
Unit Price: USD $1.919808
≥1 USD $1.919808
Inventory: 78
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Technical
Td (on/off) @ 25°C 29ns/100ns
Current - Collector Pulsed (Icm) 90A
Gate Charge 58nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 218 ns
Continuous Collector Current 30A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Turn On Time 70 ns
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 58 ns
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 194W
Input Type Standard
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 194W
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2014
Packaging Tube
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
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