RGT30NS65DGTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 650V 30A 133W TO-263S
PDF
/
Buying Options
Total Price: USD $1.96
Unit Price: USD $1.9624
≥1 USD $1.9624
≥10 USD $1.63328
≥100 USD $1.299848
≥500 USD $1.099894
Inventory: 997
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Dimensions
Height 5mm
Technical
Td (on/off) @ 25°C 18ns/64ns
Current - Collector Pulsed (Icm) 45A
Gate Charge 32nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 204 ns
Continuous Collector Current 30A
Max Junction Temperature (Tj) 175°C
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Test Condition 400V, 15A, 10 Ω, 15V
Turn On Time 40 ns
Max Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 55 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 650V
Turn-Off Delay Time 64 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 18 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 133W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 133W
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 1.946308g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
Recommended For You
RGT30NS65DGTL+price,RGT30NS65DGTL+datasheet,RGT30NS65DGTL+in stock,buy+RGT30NS65DGTL,finder+RGT30NS65DGTL,RGT30NS65DGTL+tutorials,RGT30NS65DGTL+download