SGP13N60UFDTU
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 6.5A 13A 60W 55ns
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Buying Options
Total Price: USD $1.15
Unit Price: USD $1.1528
≥1 USD $1.1528
Inventory: 9774
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 60W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 55ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 13A
Turn On Time 62 ns
Test Condition 300V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 253 ns
Gate Charge 25nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 20ns/70ns
Switching Energy 85μJ (on), 95μJ (off)
Compliance
RoHS Status ROHS3 Compliant
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