HGTP7N60B3D
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.1V @ 15V 7A 14A 60W 37ns
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Buying Options
Total Price: USD $0.95
Unit Price: USD $0.9504
≥1 USD $0.9504
Inventory: 1134
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Switching Energy 160μJ (on), 120μJ (off)
Td (on/off) @ 25°C 26ns/130ns
Current - Collector Pulsed (Icm) 56A
Gate Charge 23nC
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
Test Condition 480V, 7A, 50 Ω, 15V
Turn On Time 46 ns
Current - Collector (Ic) (Max) 14A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 37ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 60W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Position SINGLE
Additional Feature LOW CONDUCTION LOSS
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
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