HGTP3N60A4D
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 3A 17A 70W 29ns
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.1704
≥1 USD $1.1704
Inventory: 25424
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Switching Energy 37μJ (on), 25μJ (off)
Td (on/off) @ 25°C 6ns/73ns
Current - Collector Pulsed (Icm) 40A
Gate Charge 21nC
Turn Off Time-Nom (toff) 180 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Test Condition 390V, 3A, 50 Ω, 15V
Turn On Time 17.5 ns
Current - Collector (Ic) (Max) 17A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 29ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 70W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Position SINGLE
Additional Feature LOW CONDUCTION LOSS
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
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