HGTG7N60A4D
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 34A 125W 34ns
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Buying Options
Total Price: USD $4.83
Unit Price: USD $4.83265
≥1 USD $4.83265
≥10 USD $3.9653
≥100 USD $3.8418
≥500 USD $3.71735
≥1000 USD $3.59385
Inventory: 3635
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 34ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 34A
Turn On Time 17 ns
Test Condition 390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Turn Off Time-Nom (toff) 205 ns
Gate Charge 37nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55μJ (on), 60μJ (off)
Compliance
RoHS Status ROHS3 Compliant
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