HGT1S7N60A4DS
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 34A 125W 34ns
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 2502
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Switching Energy 55μJ (on), 60μJ (off)
Td (on/off) @ 25°C 11ns/100ns
Current - Collector Pulsed (Icm) 56A
Gate Charge 37nC
Turn Off Time-Nom (toff) 205 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Test Condition 390V, 7A, 25 Ω, 15V
Turn On Time 17 ns
Current - Collector (Ic) (Max) 34A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 34ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 125W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position SINGLE
Additional Feature LOW CONDUCTION LOSS
Terminal Finish MATTE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
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