Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Td (on/off) @ 25°C 46ns/140ns
Current - Collector Pulsed (Icm) 240A
Turn Off Time-Nom (toff) 410 ns
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 240A
Test Condition 320V, 240A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 430V
Collector Emitter Voltage (VCEO) 400V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 30W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ