Fall Time-Max (tf) 160 ns
Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.68mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C 26ns/66ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 329 ns
Continuous Collector Current 80A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 50A
Test Condition 300V, 50A, 5.9 Ω, 15V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 100ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 66 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ