Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 4V
Gate-Emitter Voltage-Max 20V
Switching Energy 190μJ (on), 100μJ (off)
Td (on/off) @ 25°C 10ns/30ns
Current - Collector Pulsed (Icm) 20A
Turn Off Time-Nom (toff) 100 ns
Vce(on) (Max) @ Vge, Ic 5.5V @ 10V, 5A
Test Condition 600V, 5A, 10 Ω, 10V
Collector Emitter Saturation Voltage 4.7V
Voltage - Collector Emitter Breakdown (Max) 1500V
Collector Emitter Breakdown Voltage 1.5kV
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 1.5kV
Turn-Off Delay Time 30 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 62.5W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ