Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (on), 600μJ (off)
Td (on/off) @ 25°C 116ns/292ns
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Test Condition 400V, 50A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Max Power Dissipation 223W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ