Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.41mJ (on), 600μJ (off)
Td (on/off) @ 25°C 87ns/180ns
Current - Collector Pulsed (Icm) 240A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Test Condition 400V, 60A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 76 ns
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 298W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ