Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (off)
Td (on/off) @ 25°C 70ns/144ns
Current - Collector Pulsed (Icm) 200A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Test Condition 400V, 50A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 376ns
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.6V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ