Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 80A
Reverse Recovery Time 465 ns
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C -/140ns
Switching Energy 360μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V