Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 257W
Element Configuration Single
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 77 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.85V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 85ns/174ns
Switching Energy 890μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V