NGTB40N60FL2WG
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
ON SEMICONDUCTOR NGTB40N60FL2WGIGBT Single Transistor, 80 A, 1.7 V, 366 W, 600 V, TO-247, 3 Pins
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Buying Options
Total Price: USD $3.44
Unit Price: USD $3.44375
≥1 USD $3.44375
≥10 USD $2.82625
≥100 USD $2.7379
≥500 USD $2.64955
≥1000 USD $2.5612
Inventory: 10702
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 5.3mm
Length 16.26mm
Height 21.08mm
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 970μJ (on), 440μJ (off)
Td (on/off) @ 25°C 84ns/177ns
Current - Collector Pulsed (Icm) 160A
Gate Charge 170nC
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Test Condition 400V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.85V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 72 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Power - Max 366W
Input Type Standard
Element Configuration Single
Max Power Dissipation 366W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2011
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Alternative Model
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