Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 5.5mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C 140ns/360ns
Current - Collector Pulsed (Icm) 320A
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 565 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 40A
Test Condition 600V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 260W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ