NGTB30N60SWG
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
ON SEMICONDUCTOR NGTB30N60SWGIGBT Single Transistor, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 Pins
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Buying Options
Total Price: USD $15.02
Unit Price: USD $15.021486
≥1 USD $15.021486
≥10 USD $14.171215
≥100 USD $13.369069
≥500 USD $12.61233
≥1000 USD $11.898424
Inventory: 1296
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 5.3mm
Length 16.26mm
Height 21.08mm
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 750μJ (on), 540μJ (off)
Td (on/off) @ 25°C 57ns/109ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 90nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 285 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Turn On Time 90 ns
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 200 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 189W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Max Power Dissipation 189W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
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