Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 310μJ (on), 1.14mJ (off)
Td (on/off) @ 25°C 100ns/390ns
Current - Collector Pulsed (Icm) 60A
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 30A
Test Condition 300V, 30A, 30 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 70 ns
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 1.6V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Reach Compliance Code not_compliant
Max Power Dissipation 225W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 175°C TJ