NGTB30N60FWG
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
ON SEMICONDUCTOR NGTB30N60FWG IGBT Single Transistor, 60 A, 1.45 V, 167 W, 600 V, TO-247, 3 Pins
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Buying Options
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Inventory: 1100
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 20 hours ago)
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 72ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
IGBT Type Trench
Gate Charge 170nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 81ns/190ns
Switching Energy 650μJ (on), 650μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 21.4mm
Length 16.25mm
Width 5.3mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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