Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 700μJ (on), 280μJ (off)
Td (on/off) @ 25°C 83ns/170ns
Current - Collector Pulsed (Icm) 120A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.65V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 72 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ