Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (on), 950μJ (off)
Td (on/off) @ 25°C 91ns/228ns
Current - Collector Pulsed (Icm) 200A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
Test Condition 600V, 25A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 240 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 228 ns
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 192W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ