NGTB20N120IHWG
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
ON SEMICONDUCTOR NGTB20N120IHWG IGBT Single Transistor, 40 A, 2.2 V, 341 W, 1.2 kV, TO-247, 3 Pins
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Buying Options
Total Price: USD $2.95
Unit Price: USD $2.95254
≥1 USD $2.95254
≥10 USD $2.78542
≥100 USD $2.627753
≥500 USD $2.479014
≥1000 USD $2.338692
Inventory: 1111
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 341W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 341W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.65V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 20A
Turn Off Time-Nom (toff) 395 ns
IGBT Type Trench Field Stop
Gate Charge 150nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C -/170ns
Switching Energy 480μJ (off)
Dimensions
Height 21.4mm
Length 16.25mm
Width 5.3mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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