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NGTB15N60S1EG

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description ON SEMICONDUCTOR - NGTB15N60S1EG - IGBT, 600V, 15A, W/ DIODE, TO-220-3
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Buying Options
Total Price: USD $13.55
Unit Price: USD $13.5489
≥1 USD $13.5489
≥10 USD $11.1169
≥100 USD $10.7692
≥500 USD $10.42245
≥1000 USD $10.07475
≥1000 USD $9.0326
Inventory: 1362
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.82mm
Length 10.28mm
Height 15.75mm

Technical

Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 550μJ (on), 350μJ (off)
Td (on/off) @ 25°C 65ns/170ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 88nC
IGBT Type NPT
Turn Off Time-Nom (toff) 440 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A
Test Condition 400V, 15A, 22 Ω, 15V
Turn On Time 93 ns
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 270 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 170 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 117W
Turn On Delay Time 65 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 47W
Element Configuration Single
Number of Elements 1
Pin Count 3
Max Power Dissipation 117W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time 22 Weeks

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