NGTB15N60EG
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
ON SEMICONDUCTOR - NGTB15N60EG - IGBT, 600V, 15A, TO-220-3
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 117W
Pin Count 3
Element Configuration Single
Power Dissipation 47W
Input Type Standard
Turn On Delay Time 78 ns
Power - Max 117W
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 130 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
Reverse Recovery Time 270 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 15A
IGBT Type NPT
Gate Charge 80nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 78ns/130ns
Switching Energy 900μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 15.75mm
Length 10.28mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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