Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 166 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 156W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)