Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 10A
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 40ns/145ns
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V