NGB8204NT4
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 430V 18A 115W D2PAK
PDF
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 17316
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Fall Time-Max (tf) 15000ns
Gate-Emitter Thr Voltage-Max 1.9V
Gate-Emitter Voltage-Max 18V
Current - Collector Pulsed (Icm) 50A
Turn Off Time-Nom (toff) 13000 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Turn On Time 5200 ns
Collector Emitter Breakdown Voltage 430V
Max Collector Current 18A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Input Type Logic
Case Connection COLLECTOR
Power Dissipation 115W
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Rise Time-Max 7000ns
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number NGB8204
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 18A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 115W
Voltage - Rated DC 400V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Lead (Sn80Pb20)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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