NGB18N40CLBT4G
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 430V 18A 115W D2PAK
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation 115W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NG*18N40CL
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 115W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Rise Time 4.5ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 430V
Max Collector Current 18A
Collector Emitter Breakdown Voltage 430V
Turn On Time 5200 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Turn Off Time-Nom (toff) 13000 ns
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 18V
Gate-Emitter Thr Voltage-Max 1.9V
Fall Time-Max (tf) 15000ns
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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