Gate-Emitter Thr Voltage-Max 2.1V
Gate-Emitter Voltage-Max 22V
Current - Collector Pulsed (Icm) 50A
Turn Off Time-Nom (toff) 20500 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 25A
Test Condition 300V, 6.5A, 1k Ω
Collector Emitter Saturation Voltage 10V
Collector Emitter Breakdown Voltage 440V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 2.9V
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ