Gate-Emitter Thr Voltage-Max 2.2V
Td (on/off) @ 25°C -/4.8μs
Turn Off Time-Nom (toff) 7600 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Test Condition 300V, 1k Ω, 5V
Collector Emitter Saturation Voltage 1.25V
Collector Emitter Breakdown Voltage 430V
Max Collector Current 21A
Collector Emitter Voltage (VCEO) 1.6V
Turn-Off Delay Time 4.8 μs
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Turn On Delay Time 700 ns
Case Connection COLLECTOR
Element Configuration Single
Operating Supply Voltage 400V
Base Part Number ISL9V3040
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ