Td (on/off) @ 25°C -/4.8μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000 ns
Turn Off Time-Nom (toff) 7600 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Test Condition 300V, 1k Ω, 5V
Max Breakdown Voltage 360V
Collector Emitter Breakdown Voltage 360V
Max Collector Current 21A
Collector Emitter Voltage (VCEO) 1.58V
Turn-Off Delay Time 4.8 μs
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Turn On Delay Time 700 ns
Case Connection COLLECTOR
Element Configuration Single
Base Part Number ISL9V3036
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ