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HGTP3N60A4D

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 17A 70W TO220AB
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.1704
≥1 USD $1.1704
Inventory: 7121
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Switching Energy 37μJ (on), 25μJ (off)
Td (on/off) @ 25°C 6ns/73ns
Current - Collector Pulsed (Icm) 40A
Gate Charge 21nC
Turn Off Time-Nom (toff) 180 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Test Condition 390V, 3A, 50 Ω, 15V
Turn On Time 17.5 ns
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 19 ns
Max Collector Current 17A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Rise Time 11ns
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 70W
Element Configuration Single
Number of Elements 1
Current Rating 17A
Max Power Dissipation 70W
Voltage - Rated DC 600V
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 36 Weeks

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